 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 2200 862 1354 12x103 1 0.404 V A A A V m Phase Control Thyristor 5STP 09D2201 Doc. No. 5SYA1059-01 March 05 * * * Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking Maximum rated values 1) Symbol VDRM, VRRM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms Exp. to 1470 V, Tvj = 125C Symbol Conditions IDRM IRRM 5STP 09D2201 5STP 09D2001 2200 V 2000 V 1000 V/s min typ 5STP 09D1801 1800 V Characteristic values max 70 70 Unit mA mA Forward leakage current Reverse leakage current VDRM, Tvj = 125C VRRM, Tvj = 125C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 8 typ 10 max 12 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Symbol Conditions m DS min 25 typ max 0.26 Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 09D2201 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 125 C, VD = VR = 0 V tp = 8.3 ms, Tvj = 125 C, VD = VR = 0 V Half sine wave, Tc = 70C min typ max 862 1354 12x10 3 Unit A A A A2s A A2s Unit V V m mA mA mA mA 1 720x10 3 3 12.8x10 680x10 min typ max 1.6 0.404 3 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C IT = 1500 A, Tvj = 125 C IT = 1000 A - 3500 A, Tvj= 125 C 170 90 450 350 Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 C, IT = IT(AV), VD 1470 V, IFG = 2 A, tr = 0.3 s Cont. f = 50 Hz Cont. f = 1 Hz min typ max 200 1000 Unit A/s A/s s Circuit-commutated turn-off tq time Characteristic values Tvj = 125C, ITRM = 1500 A, VR = 200 V, diT/dt = -12.5 A/s, VD 0.67VDRM, dvD/dt = 50V/s min 200 Parameter Recovery charge Symbol Conditions Qrr Tvj = 125C, ITRM = 1500 A, VR = 200 V, diT/dt = -12.5 A/s VD = 0.4VRM, IFG = 2 A, tr = 0.3 s, Tvj = 25 C typ 1600 max Unit As Gate turn-on delay time tgd 2 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1059-01 March 05 page 2 of 6 5STP 09D2201 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Mean forward gate power Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT Tvj = -40 C Tvj = 25 C Tvj = 125 C min typ max 12 10 10 3 Unit V A V W Unit V Parameter Gate-trigger voltage min typ max 4 3 0.25 2 500 250 mA Gate-trigger current IGT Tvj = -40 C Tvj = 25 C Tvj = 125 C 10 150 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 125 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 8...12 kN Anode-side cooled Fm = 8...12 kN Cathode-side cooled Fm = 8...12 kN Double-side cooled Fm = 8...12 kN Single-side cooled Fm = 8...12 kN typ max 32 52 83 7.5 15 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 13.070 0.4857 2 8.030 0.2162 3 8.200 0.0762 4 2.700 0.0043 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1059-01 March 05 page 3 of 6 5STP 09D2201 i 2dt (106 A2s) ITSM ( kA ) IT ( A ) 6000 25C 125C 20 1,1 5000 18 I TSM 2 i dt 1 4000 16 0,9 3000 14 0,8 2000 12 0,7 1000 10 0,6 0 0 1 2 3 V (V) 4 T 8 1 10 t ( ms ) 0,5 100 Fig. 2 Max. on-state voltage characteristics 7 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V VG ( V ) 14 V FGM VG ( V ) 6 DC = P GAVm 12 5 -40 C 10 500s 1ms 4 +25 C 8 2 IGTmin +125 C 4 1 V GTmin 2 10ms DC = P GAVm 0 0 0 0,5 1 0 IG ( A ) 2 4 6 8 10 IFGM 3 6 12 IG ( A ) Fig. 4 Gate trigger characteristics Fig. 5 Gate trigger characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1059-01 March 05 page 4 of 6 5STP 09D2201 PT ( W ) PT ( W ) 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 = 30 60 90 120 180 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 = 30 60 90 120 180 270 DC DC 400 600 800 1000 I TAV ( A ) I TAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f TC ( C ) 130 Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f TC ( C ) 130 120 120 110 110 100 100 90 90 80 DC 80 DC 270 70 70 60 0 200 = 30 400 60 600 90 120 180 800 1000 60 0 200 = 30 400 180 60 90 120 600 800 1000 I TAV ( A ) I TAV ( A ) Fig. 8 Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f Fig. 9 Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1059-01 March 05 page 5 of 6 5STP 09D2201 RED WHITE Fig. 10 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1059-01 March 05 |
Price & Availability of 5STP09D2001
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |